page:p2-p1 plastic-encapsulate diodes high speed switching diode features small surface mounting type low reverse current and low forward voltage high reliability marking: 5 maximum ratings and electrical characteristics, single diode @ta=25 parameter symbol limits unit dc reverse voltage v r 30 v mean rectifying current i o 30 ma peak forward surge current i fsm 200 junction temperature t j 125 ! storage temperature t stg -40-125 ! electrical characteristics (tamb=25 unless otherwise specified) parameter symbol min. typ. max. unit conditions forward voltage v f 0.3 v i f =1ma reverse current i r 0.5 a v r =30v v rm 40 v ma peak reverse voltage capacitance between terminals c t 2 vr=1v,f=1mhz sod-523 - + RB751S-40 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p2-p2 plastic-encapsulate diodes typical characteristics RB751S-40 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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